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| PROCESS TRIAC CPQ090 4.0 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,310 PRINCIPAL DEVICE TYPES 2N6075A CQ202-4MS CQ223-4M CQD-4M Glass Passivated Mesa 90 x 90 MILS 8.6 MILS 0.6 MILS 61 x 48 MILS 11 x 9.8 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A BACKSIDE MT2 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (19 -May 2005) PROCESS CPQ090 Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (19 -May 2005) |
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